Alloying and Structure of Ultrathin Gallium Films on the (111) and (110) Surfaces of Palladium
نویسندگان
چکیده
Growth, thermal stability, and structure of ultrathin gallium films on Pd(111) and Pd(110) are investigated by low-energy ion scattering and low-energy electron diffraction. Common to both surface orientations are growth of disordered Ga films at coverages of a few monolayers (T = 150 K), onset of alloy formation at low temperatures (T ≈ 200 K), and formation of a metastable, mostly disordered 1:1 surface alloy at temperatures around 400-500 K. At higher temperatures a Ga surface fraction of ∼0.3 is slightly stabilized on Pd(111), which we suggest to be related to the formation of Pd2Ga bulk-like films. While on Pd(110) only a Pd-up/Ga-down buckled surface was observed, an inversion of buckling was observed on Pd(111) upon heating. Similarities and differences to the related Zn/Pd system are discussed.
منابع مشابه
FIRST PRINCIPLES TOTAL ENERGY STUDY OF THE MORPHOLOGICAL INSTABILITY OF Mo(111) INDUCED BY ULTRATHIN FILMS OF Rh
By using first principles total energy calculations, the surface energies of (100), (110), (111) and (211) surfaces of Mo before and after adsorbing ultrathin films of Rh have been presented. The results show that in the case of clean Mo surfaces Mo(111) is stable against faceting to Mo(211), Mo(110) and Mo(100), while after adsorbing one physical monolayer of Rh, the surface energies of all th...
متن کاملCalculation for Energy of (111) Surfaces of Palladium in Tight Binding Model
In this work calculation of energetics of transition metal surfaces is presented. The tight-binding model is employed in order to calculate the energetics. The tight-binding basis set is limited to d orbitals which are valid for elements at the end of transition metals series. In our analysis we concentrated on electronic effects at temperature T=0 K, this means that no entropic term will be pr...
متن کاملPhotoemission measurements of Ultrathin SiO2 film at low take-off angles
The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...
متن کاملDistribution of Pd clusters on ultrathin, epitaxial TiOx films on Pt3Ti(111)
Scanning tunnelling microscopy (STM) was used to investigate the nucleation and growth of palladium clusters on two different, ultrathin, epitaxial, titania films grown on a Pt3Ti(111) surface. The first oxide phase, z'-TiO x , is anisotropic and consists of parallel stripes separated by trenches. Defects (i.e., oxygen vacancies) in this structure are confined to these trenches and act as nucle...
متن کاملThe effect of Ga-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis
In this research, zinc oxide thin films with gallium impurity have been deposited using the spray pyrolysis technique. The structural and optical properties of these films are investigated as a function of gallium doping concentrations. The ZnO and ZnO:Ga films grown at a substrate temperature of 350 ºC with gallium doping concentrations from 1.0 to 5.0.%. The XRD analysis indicated that ZnO f...
متن کامل